SPW07N60CFDFKSA1
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Infineon Technologies SPW07N60CFDFKSA1

Manufacturer No:
SPW07N60CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPW07N60CFDFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6.6A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number SPW07N60CFDFKSA1 SPW47N60CFDFKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 4.6A, 10V 83mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 5V @ 300µA 5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 322 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V 7700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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