Infineon Technologies-SPU30P06P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	75mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:	48 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1535 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO251-3
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

Infineon Technologies SPU30P06P