SPU18P06P
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Infineon Technologies SPU18P06P

Manufacturer No:
SPU18P06P
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPU18P06P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.6A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number SPU18P06P SPU08P06P  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 420 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 42W (Tc)
Operating Temperature - -
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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