SPU04N60S5BKMA1
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Infineon Technologies SPU04N60S5BKMA1

Manufacturer No:
SPU04N60S5BKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPU04N60S5BKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4.5A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:22.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-21
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number SPU04N60S5BKMA1 SPU02N60S5BKMA1   SPU03N60S5BKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 1.8A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 200µA 5.5V @ 80µA 5.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 22.9 nC @ 10 V 9.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V 240 pF @ 25 V 420 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 50W (Tc) 25W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-21 PG-TO251-3-21 PG-TO251-3-21
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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