SPU03N60C3BKMA1
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Infineon Technologies SPU03N60C3BKMA1

Manufacturer No:
SPU03N60C3BKMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPU03N60C3BKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 3.2A TO251-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-21
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number SPU03N60C3BKMA1 SPU04N60C3BKMA1   SPU07N60C3BKMA1   SPS03N60C3BKMA1   SPU01N60C3BKMA1   SPU02N60C3BKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 4.5A (Tc) 7.3A (Tc) 3.2A (Tc) 800mA (Tc) 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V 1.4Ohm @ 2A, 10V 6Ohm @ 500mA, 10V 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 350µA 3.9V @ 135µA 3.9V @ 250µA 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 25 nC @ 10 V 27 nC @ 10 V 17 nC @ 10 V 5 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 490 pF @ 25 V 790 pF @ 25 V 400 pF @ 25 V 100 pF @ 25 V 200 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 38W (Tc) 50W (Tc) 83W (Tc) 38W (Tc) 11W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO251-3-21 PG-TO251-3-21 PG-TO251-3-21 PG-TO251-3-11 PG-TO251-3-21 PG-TO251-3-21
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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