SPP80N03S2L04AKSA1
  • Share:

Infineon Technologies SPP80N03S2L04AKSA1

Manufacturer No:
SPP80N03S2L04AKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPP80N03S2L04AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 80A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.10
847

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP80N03S2L04AKSA1 SPP80N03S2L05AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V 5.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA 2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V 89.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 3320 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 188W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

C3M0025065K
C3M0025065K
Wolfspeed, Inc.
GEN 3 650V 25 M SIC MOSFET
FDMS7656AS
FDMS7656AS
onsemi
MOSFET N-CH 30V 31A/49A 8PQFN
PJQ5466A_R2_00001
PJQ5466A_R2_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
DMP2004WK-7
DMP2004WK-7
Diodes Incorporated
MOSFET P-CH 20V 400MA SOT323
IPD60R600P7SE8228AUMA1
IPD60R600P7SE8228AUMA1
Infineon Technologies
MOSFET N-CH 600V 6A TO252-3
IRF730STRR
IRF730STRR
Vishay Siliconix
MOSFET N-CH 400V 5.5A D2PAK
ZXM61P02FTC
ZXM61P02FTC
Diodes Incorporated
MOSFET P-CH 20V 900MA SOT23-3
FDB12N50UTM_WS
FDB12N50UTM_WS
onsemi
MOSFET N-CH 500V 10A D2PAK
IXTH90N15T
IXTH90N15T
IXYS
MOSFET N-CH 150V 90A TO247
SI4410BDY-T1-E3
SI4410BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 7.5A 8SO
IRF6725MTRPBF
IRF6725MTRPBF
Infineon Technologies
MOSFET N-CH 30V 28A DIRECTFET
IPS050N03LGBKMA1
IPS050N03LGBKMA1
Infineon Technologies
MOSFET N-CHANNEL 30V 50A TO251-3

Related Product By Brand

BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
6MS30017E43W34404NOSA1
6MS30017E43W34404NOSA1
Infineon Technologies
IGBT MODULE 1700V 4280A
IKW25T120
IKW25T120
Infineon Technologies
IKW25T120 - DISCRETE IGBT WITH A
FX161CJ16F40FBBXT
FX161CJ16F40FBBXT
Infineon Technologies
LEGACY 16-BIT MCU
IR2105STR
IR2105STR
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
IRU3037ACFPBF
IRU3037ACFPBF
Infineon Technologies
IC REG CTRLR BUCK/BOOST 8TSSOP
CY88155PFT-G-112-JN-EFE1
CY88155PFT-G-112-JN-EFE1
Infineon Technologies
IC CLOCK GENERATOR EMI 8TSSOP
MB90020PMT-GS-378
MB90020PMT-GS-378
Infineon Technologies
IC MCU 120LQFP
MB91F058BSPMC-GSK5E1
MB91F058BSPMC-GSK5E1
Infineon Technologies
IC MCU FLASH MICOM-0.09 208LQFP
MB96F326RSBPMC-GE2
MB96F326RSBPMC-GE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 80LQFP
S25FL064LABNFI041
S25FL064LABNFI041
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8USON
S25FS064SDSNFV033
S25FS064SDSNFV033
Infineon Technologies
IC FLSH 64MBIT SPI/QUAD I/O 8LGA