SPP21N50C3HKSA1
  • Share:

Infineon Technologies SPP21N50C3HKSA1

Manufacturer No:
SPP21N50C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP21N50C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 21A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
588

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP21N50C3HKSA1 SPP21N50C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 2400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FQPF12P10
FQPF12P10
Fairchild Semiconductor
MOSFET P-CH 100V 8.2A TO220F
FQA10N60C
FQA10N60C
Fairchild Semiconductor
MOSFET N-CH 600V 10A TO3P
IPA60R600P7SXKSA1
IPA60R600P7SXKSA1
Infineon Technologies
MOSFET N-CH 600V 6A TO220
BSP122,115
BSP122,115
Nexperia USA Inc.
MOSFET N-CH 200V 550MA SOT223
IPD90P03P404ATMA2
IPD90P03P404ATMA2
Infineon Technologies
MOSFET P-CH 30V 90A TO252-31
SSM3K7002KFU,LXH
SSM3K7002KFU,LXH
Toshiba Semiconductor and Storage
SMOS LOW RON NCH IO: 0.4A VDSS:
DMN24H11DS-7
DMN24H11DS-7
Diodes Incorporated
MOSFET N-CH 240V 270MA SOT23 T&R
IPD65R950CFDATMA1
IPD65R950CFDATMA1
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
BSP135 E6906
BSP135 E6906
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
AUIRLZ24NS
AUIRLZ24NS
Infineon Technologies
MOSFET N-CH 55V 18A D2PAK
MCH3374-TL-W
MCH3374-TL-W
onsemi
MOSFET P-CH 12V 3A SC70FL/MCPH3
R5205PND3FRATL
R5205PND3FRATL
Rohm Semiconductor
525V 5A TO-252, AUTOMOTIVE POWER

Related Product By Brand

OUTOFSHAFTFOR3D2GOTOBO1
OUTOFSHAFTFOR3D2GOTOBO1
Infineon Technologies
OUT OF SHAFT FOR 3D 2 GO
BAS7002LE6327XTMA1
BAS7002LE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 70V 70MA TSLP-2
IPT111N20NFDATMA1
IPT111N20NFDATMA1
Infineon Technologies
MOSFET N-CH 200V 96A 8HSOF
F3L400R10W3S7FB11BPSA1
F3L400R10W3S7FB11BPSA1
Infineon Technologies
IGBT MODULE LOW POWER EASY
TLE6280GPNT
TLE6280GPNT
Infineon Technologies
IC MOTOR DRIVER 8V-20V 36DSO
SLB9670VQ12FW643XUMA2
SLB9670VQ12FW643XUMA2
Infineon Technologies
SLB9670 - OPTIGA EMBEDDED SECURI
MB91F467SAPMC-C0015
MB91F467SAPMC-C0015
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 176LQFP
MB91F777DPMC-GSK5E1
MB91F777DPMC-GSK5E1
Infineon Technologies
IC MCU 32B 1.125MB FLASH 144LQFP
MB89193PF-G-317-BND-RE1
MB89193PF-G-317-BND-RE1
Infineon Technologies
IC MCU 8BIT 8KB MROM 28SOP
CY14B101Q2-LHXI
CY14B101Q2-LHXI
Infineon Technologies
IC NVSRAM 1MBIT SPI 40MHZ 8DFN
S26KS512SDPBHA020
S26KS512SDPBHA020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 24FBGA
CY8C4128LQI-BL543
CY8C4128LQI-BL543
Infineon Technologies
MICROCONTROLLER ARM CORTEX