SPP18P06PHKSA1
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Infineon Technologies SPP18P06PHKSA1

Manufacturer No:
SPP18P06PHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP18P06PHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.7A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):81.1W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number SPP18P06PHKSA1 SPP18P06PHXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta) 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V 130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 860 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 81.1W (Ta) 81.1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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