SPP15P10PGHKSA1
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Infineon Technologies SPP15P10PGHKSA1

Manufacturer No:
SPP15P10PGHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP15P10PGHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 15A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number SPP15P10PGHKSA1 SPP15P10PLGHKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 10.6A, 10V 200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1.54mA 2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1280 pF @ 25 V 1490 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 128W (Tc) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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