SPP15N65C3HKSA1
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Infineon Technologies SPP15N65C3HKSA1

Manufacturer No:
SPP15N65C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP15N65C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 15A TO220-3
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id:3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number SPP15N65C3HKSA1 SPP15N65C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 15A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 280mOhm @ 9.4A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 675µA -
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 156W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3-1 -
Package / Case TO-220-3 -

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