SPP100N08S2-07
  • Share:

Infineon Technologies SPP100N08S2-07

Manufacturer No:
SPP100N08S2-07
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP100N08S2-07 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 100A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.1mOhm @ 66A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6020 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP100N08S2-07 SPP100N08S2L-07  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 66A, 10V 6.8mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 246 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6020 pF @ 25 V 7130 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

2SK1460LS
2SK1460LS
Sanyo
N-CHANNEL SILICON MOSFET
DMN2991UFZ-7B
DMN2991UFZ-7B
Diodes Incorporated
MOSFET N-CH 20V 550MA 3DFN
BSS138BKW/DG/B2135
BSS138BKW/DG/B2135
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
SQW61N65EF-GE3
SQW61N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 62A TO247AD
NVTYS005N04CTWG
NVTYS005N04CTWG
onsemi
T6 40V N-CH SL IN LFPAK33
STFW42N60M2-EP
STFW42N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 34A ISOWATT
IPA60R230P6
IPA60R230P6
Infineon Technologies
IPA60R230 - 600V COOLMOS N-CHANN
STK850
STK850
STMicroelectronics
MOSFET N-CH 30V 30A POLARPAK
IXTP3N50P
IXTP3N50P
IXYS
MOSFET N-CH 500V 3.6A TO220AB
IPP139N08N3 G
IPP139N08N3 G
Infineon Technologies
MOSFET N-CH 80V 45A TO220-3
FQB7N60TM
FQB7N60TM
onsemi
MOSFET N-CH 600V 7.4A D2PAK
R6011KNXC7G
R6011KNXC7G
Rohm Semiconductor
600V 11A TO-220FM, HIGH-SPEED SW

Related Product By Brand

IRF7805TRPBF
IRF7805TRPBF
Infineon Technologies
IRF7805 - 12V-300V N-CHANNEL POW
IPD082N10N3GBTMA1
IPD082N10N3GBTMA1
Infineon Technologies
MOSFET N-CH 100V 80A TO252-3
FP50R07N2E4B11BOSA1
FP50R07N2E4B11BOSA1
Infineon Technologies
IGBT MODULE 650V 70A
S6E2GM8H0AGV2000A
S6E2GM8H0AGV2000A
Infineon Technologies
IC MCU 32BIT 1MB FLASH 144LQFP
MB96F355RSBPMC1-GS-ERE2
MB96F355RSBPMC1-GS-ERE2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 64LQFP
MB90587CPMC-G-110-JNE1
MB90587CPMC-G-110-JNE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
MB90F882SPMC-G-N9E1
MB90F882SPMC-G-N9E1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100LQFP
MB91101APF-G-JNE1
MB91101APF-G-JNE1
Infineon Technologies
IC MCU 32BIT ROMLESS 100QFP
MB96F386RSCPMC-GS-201E2
MB96F386RSCPMC-GS-201E2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 120LQFP
S25FS256SAGMFV000
S25FS256SAGMFV000
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S25FL512SAGBHV213
S25FL512SAGBHV213
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 24BGA
S34ML08G101BHI003
S34ML08G101BHI003
Infineon Technologies
IC FLASH 8GBIT PARALLEL 63BGA