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| Part Number | SPP08N80C3XKSA1 | SPI08N80C3XKSA1 | SPP02N80C3XKSA1 | SPP04N80C3XKSA1 | SPP06N80C3XKSA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Obsolete | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 800 V | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | 8A (Tc) | 2A (Tc) | 4A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.1A, 10V | 650mOhm @ 5.1A, 10V | 2.7Ohm @ 1.2A, 10V | 1.3Ohm @ 2.5A, 10V | 900mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 470µA | 3.9V @ 470µA | 3.9V @ 120µA | 3.9V @ 240µA | 3.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 60 nC @ 10 V | 16 nC @ 10 V | 31 nC @ 10 V | 41 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V | 1100 pF @ 100 V | 290 pF @ 100 V | 570 pF @ 100 V | 785 pF @ 100 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 104W (Tc) | 104W (Tc) | 42W (Tc) | 63W (Tc) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-3 | PG-TO262-3-1 | PG-TO220-3 | PG-TO220-3 | PG-TO220-3 |
| Package / Case | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 | TO-220-3 |
