SPP07N65C3HKSA1
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Infineon Technologies SPP07N65C3HKSA1

Manufacturer No:
SPP07N65C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP07N65C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 7.3A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number SPP07N65C3HKSA1 SPI07N65C3HKSA1   SPP07N60C3HKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 7.3A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V 790 pF @ 25 V 790 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO262-3-1 PG-TO220-3
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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