SPP07N60C3XKSA1
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Infineon Technologies SPP07N60C3XKSA1

Manufacturer No:
SPP07N60C3XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP07N60C3XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 7.3A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number SPP07N60C3XKSA1 SPP02N60C3XKSA1   SPP04N60C3XKSA1   SPP07N60C3HKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V - 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) - 4.5A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V - 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA - 3.9V @ 200µA 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V - 25 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V - 490 pF @ 25 V 790 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 83W (Tc) - 50W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 - PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 - TO-220-3 TO-220-3

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