SPP07N60C3HKSA1
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Infineon Technologies SPP07N60C3HKSA1

Manufacturer No:
SPP07N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP07N60C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 7.3A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Part Number SPP07N60C3HKSA1 SPP07N60C3XKSA1   SPP07N65C3HKSA1   SPP02N60C3HKSA1   SPP03N60C3HKSA1   SPP04N60C3HKSA1   SPP06N60C3HKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 7.3A (Tc) 7.3A (Tc) 1.8A (Tc) 3.2A (Tc) 4.5A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 350µA 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V 27 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V 790 pF @ 25 V 790 pF @ 25 V 200 pF @ 25 V 400 pF @ 25 V 490 pF @ 25 V 620 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 83W (Tc) 25W (Tc) 38W (Tc) 50W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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