SPP04N80C3XK
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Infineon Technologies SPP04N80C3XK

Manufacturer No:
SPP04N80C3XK
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPP04N80C3XK Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 4A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number SPP04N80C3XK SPP06N80C3XK   SPP08N80C3XK  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 6A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V 900mOhm @ 3.8A, 10V 650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA 3.9V @ 250µA 3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 41 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V 785 pF @ 100 V 1100 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 63W (Tc) 83W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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