SPP04N60S5
  • Share:

Infineon Technologies SPP04N60S5

Manufacturer No:
SPP04N60S5
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPP04N60S5 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$0.59
1,411

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP04N60S5 SPP07N60S5   SPN04N60S5   SPP02N60S5   SPP03N60S5  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Active Active
FET Type - N-Channel N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 650 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C - 7.3A (Tc) 800mA (Ta) 1.8A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs - 600mOhm @ 4.6A, 10V 950mOhm @ 2.8A, 10V 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id - 5.5V @ 350µA 5.5V @ 200µA 5.5V @ 80µA 5.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs - 35 nC @ 10 V 17 nC @ 10 V 9.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 970 pF @ 25 V 600 pF @ 25 V 240 pF @ 25 V 420 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) - 83W (Tc) 1.8W (Ta) 25W (Tc) 38W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package - PG-TO220-3-1 PG-SOT223-4 PG-TO220-3-1 PG-TO220-3-1
Package / Case - TO-220-3 TO-261-4, TO-261AA TO-220-3 TO-220-3

Related Product By Categories

FDB15N50
FDB15N50
onsemi
MOSFET N-CH 500V 15A D2PAK
FQP4N80
FQP4N80
onsemi
MOSFET N-CH 800V 3.9A TO220-3
IPI60R250CP
IPI60R250CP
Infineon Technologies
COOLMOS N-CHANNEL POWER MOSFET
PHP33NQ20T,127
PHP33NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 32.7A TO220AB
STB20NM50FDT4
STB20NM50FDT4
STMicroelectronics
MOSFET N-CH 500V 20A D2PAK
FDP050AN06A0
FDP050AN06A0
onsemi
MOSFET N-CH 60V 18A/80A TO220-3
PSMN1R5-30BLE118
PSMN1R5-30BLE118
NXP USA Inc.
N-CHANNEL POWER MOSFET
NTMFS0D8N03CT1G
NTMFS0D8N03CT1G
onsemi
MOSFET, POWER, SINGLE N-CHANNEL,
AOWF11S60
AOWF11S60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO262F
IXFK30N110P
IXFK30N110P
IXYS
MOSFET N-CH 1100V 30A TO264AA
BUK7E3R5-60E,127
BUK7E3R5-60E,127
Nexperia USA Inc.
MOSFET N-CH 60V 120A I2PAK
STH180N4F6-2
STH180N4F6-2
STMicroelectronics
MOSFET N-CH 40V 120A H2PAK-2

Related Product By Brand

BSO615N
BSO615N
Infineon Technologies
MOSFET 2N-CH 60V 2.6A 8SOIC
IRF6678
IRF6678
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
IPN80R900P7ATMA1
IPN80R900P7ATMA1
Infineon Technologies
MOSFET N-CHANNEL 800V 6A SOT223
IRGPF40F
IRGPF40F
Infineon Technologies
IGBT FAST 900V 31A TO-247AC
ICE2AS01GHUMA1
ICE2AS01GHUMA1
Infineon Technologies
IC OFFLINE SWITCH
KP254XTMA1
KP254XTMA1
Infineon Technologies
IC ANLG BAROMETRIC SNSR DSOF8-16
CY8C4247AZI-M485
CY8C4247AZI-M485
Infineon Technologies
IC MCU 32BIT 128KB FLASH 64TQFP
MB90349ASPFV-G-366E1
MB90349ASPFV-G-366E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB90548GSPMC-G-392E1
MB90548GSPMC-G-392E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB96F315RSBPMC-GS-JAE1
MB96F315RSBPMC-GS-JAE1
Infineon Technologies
IC MCU 16BIT 160KB FLASH 48LQFP
CYD09S72V-133BBI
CYD09S72V-133BBI
Infineon Technologies
IC SRAM 9MBIT PARALLEL 484FBGA
CY7C1318KV18-250BZXC
CY7C1318KV18-250BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA