SPP04N60C3HKSA1
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Infineon Technologies SPP04N60C3HKSA1

Manufacturer No:
SPP04N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP04N60C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 4.5A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number SPP04N60C3HKSA1 SPP04N60C3XKSA1   SPP06N60C3HKSA1   SPP24N60C3HKSA1   SPP07N60C3HKSA1   SPP02N60C3HKSA1   SPP03N60C3HKSA1   SPP04N50C3HKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 650 V 650 V 650 V 650 V 650 V 560 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4.5A (Tc) 6.2A (Tc) 24.3A (Tc) 7.3A (Tc) 1.8A (Tc) 3.2A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V 950mOhm @ 2.8A, 10V 750mOhm @ 3.9A, 10V 160mOhm @ 15.4A, 10V 600mOhm @ 4.6A, 10V 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA 3.9V @ 200µA 3.9V @ 260µA 3.9V @ 1.2mA 3.9V @ 350µA 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V 135 nC @ 10 V 27 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V 490 pF @ 25 V 620 pF @ 25 V 3000 pF @ 25 V 790 pF @ 25 V 200 pF @ 25 V 400 pF @ 25 V 470 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 50W (Tc) 50W (Tc) 74W (Tc) 240W (Tc) 83W (Tc) 25W (Tc) 38W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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