SPP02N80C3XKSA1
  • Share:

Infineon Technologies SPP02N80C3XKSA1

Manufacturer No:
SPP02N80C3XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPP02N80C3XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 2A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.48
1,233

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP02N80C3XKSA1 SPP06N80C3XKSA1   SPP04N80C3XKSA1   SPP08N80C3XKSA1   SPP02N60C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V -
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 6A (Tc) 4A (Tc) 8A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V 900mOhm @ 3.8A, 10V 1.3Ohm @ 2.5A, 10V 650mOhm @ 5.1A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 120µA 3.9V @ 250µA 3.9V @ 240µA 3.9V @ 470µA -
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 41 nC @ 10 V 31 nC @ 10 V 60 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V 785 pF @ 100 V 570 pF @ 100 V 1100 pF @ 100 V -
FET Feature - - - - -
Power Dissipation (Max) 42W (Tc) 83W (Tc) 63W (Tc) 104W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole -
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3 PG-TO220-3 -
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 -

Related Product By Categories

IXFH26N100X
IXFH26N100X
IXYS
MOSFET N-CH 1000V 26A TO247
RFD20N03
RFD20N03
Harris Corporation
N-CHANNEL POWER MOSFET
AUIRFR3806TRL
AUIRFR3806TRL
Infineon Technologies
MOSFET N-CH 60V 43A DPAK
SIA427ADJ-T1-GE3
SIA427ADJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 12A PPAK SC70-6
DMN1150UFB-7B
DMN1150UFB-7B
Diodes Incorporated
MOSFET N-CH 12V 1.41A 3DFN
CSD18532KCS
CSD18532KCS
Texas Instruments
MOSFET N-CH 60V 100A TO220-3
SIS322DNT-T1-GE3
SIS322DNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 38.3A PPAK1212-8
FDMS0310AS
FDMS0310AS
onsemi
MOSFET N-CH 30V 19A/22A 8PQFN
YJL3134K-F2-0000HF
YJL3134K-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 20V 0.9A SOT-23-3L
IPA60R800CEXKSA1
IPA60R800CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 5.6A TO220-FP
RTR020P02HZGTL
RTR020P02HZGTL
Rohm Semiconductor
MOSFET P-CH 20V 2A TSMT3
BSM600C12P3G201
BSM600C12P3G201
Rohm Semiconductor
SICFET N-CH 1200V 600A MODULE

Related Product By Brand

DD1200S17H4B2BOSA2
DD1200S17H4B2BOSA2
Infineon Technologies
DIODE MODULE 1200V 1200A
BC849CWE6327
BC849CWE6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT323-3
AUIRF8739L2TR
AUIRF8739L2TR
Infineon Technologies
MOSFET N-CH 40V 57A DIRECTFET
AUIRFP064N
AUIRFP064N
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
IKD06N60RFAATMA1
IKD06N60RFAATMA1
Infineon Technologies
IGBT 600V 12A 100W PG-TO252-3
PEB20570FV3.1
PEB20570FV3.1
Infineon Technologies
LINE & PORT INTERFACE CONTROLLER
S6E2DF5GJAMV20000
S6E2DF5GJAMV20000
Infineon Technologies
IC MCU 32BIT 384KB FLASH 120LQFP
MB90549GSPFR-G-318E1
MB90549GSPFR-G-318E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
S29GL128S10DHI010
S29GL128S10DHI010
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
CY7C1518KV18-250BZXI
CY7C1518KV18-250BZXI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C09569V-100BBC
CY7C09569V-100BBC
Infineon Technologies
IC SRAM 576KBIT PARALLEL 172FBGA
CY14B104N-BA45XCT
CY14B104N-BA45XCT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA