SPP02N60C3HKSA1
  • Share:

Infineon Technologies SPP02N60C3HKSA1

Manufacturer No:
SPP02N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPP02N60C3HKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 1.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
318

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPP02N60C3HKSA1 SPP03N60C3HKSA1   SPP04N60C3HKSA1   SPP06N60C3HKSA1   SPP07N60C3HKSA1   SPP02N60C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V -
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 3.2A (Tc) 4.5A (Tc) 6.2A (Tc) 7.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 750mOhm @ 3.9A, 10V 600mOhm @ 4.6A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 260µA 3.9V @ 350µA -
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V 27 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 400 pF @ 25 V 490 pF @ 25 V 620 pF @ 25 V 790 pF @ 25 V -
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 38W (Tc) 50W (Tc) 74W (Tc) 83W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole -
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3 -
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 -

Related Product By Categories

BSZ0501NSIATMA1
BSZ0501NSIATMA1
Infineon Technologies
MOSFET N-CH 30V 25A/40A TSDSON
SIHP17N80AE-GE3
SIHP17N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 15A TO220AB
SQM10250E_GE3
SQM10250E_GE3
Vishay Siliconix
MOSFET N-CH 250V 65A TO263
IPD350N06LGBTMA1
IPD350N06LGBTMA1
Infineon Technologies
MOSFET N-CH 60V 29A TO252-3
TK560P60Y,RQ
TK560P60Y,RQ
Toshiba Semiconductor and Storage
MOSFET N-CHANNEL 600V 7A DPAK
TPHR9203PL,L1Q
TPHR9203PL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 150A 8SOP
STB16NF06LT4
STB16NF06LT4
STMicroelectronics
MOSFET N-CH 60V 16A D2PAK
SSM3J306T(TE85L,F)
SSM3J306T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 2.4A TSM
SI4410DY,518
SI4410DY,518
NXP USA Inc.
MOSFET N-CH 30V 8SO
SI1037X-T1-GE3
SI1037X-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 770MA SC89
SIE836DF-T1-E3
SIE836DF-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 18.3A 10POLARPK
NDD01N60T4G
NDD01N60T4G
onsemi
MOSFET N-CH 600V 1.5A DPAK

Related Product By Brand

EVALAUDAMP24TOBO1
EVALAUDAMP24TOBO1
Infineon Technologies
EVAL AUDIO IGT40R IRS20957
AUIRFR4104TRL
AUIRFR4104TRL
Infineon Technologies
MOSFET N-CH 40V 42A DPAK
TUA 6039F-2
TUA 6039F-2
Infineon Technologies
IC VIDEO TUNER 48VQFN
IRS2011STRPBF
IRS2011STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
IR3624MTRPBF
IR3624MTRPBF
Infineon Technologies
IC REG CTRLR BUCK 10-MLPD
CY25100SXC-065
CY25100SXC-065
Infineon Technologies
IC CLOCK GEN PROG
MB90020PMT-GS-246E1
MB90020PMT-GS-246E1
Infineon Technologies
IC MCU 120LQFP
MB90F428GCZPFV-GSE1
MB90F428GCZPFV-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
CY90F543GPFR-GE1
CY90F543GPFR-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY7C024-15AXC
CY7C024-15AXC
Infineon Technologies
IC SRAM 64KBIT PARALLEL 100TQFP
CYRF6936B-40LTXC
CYRF6936B-40LTXC
Infineon Technologies
IC RF TXRX ISM>1GHZ 40VFQFN
CY9AF144NBBGL-GK9E1
CY9AF144NBBGL-GK9E1
Infineon Technologies
IC MCU 32BIT 288KB FLASH 96FBGA