SPI80N08S2-07
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Infineon Technologies SPI80N08S2-07

Manufacturer No:
SPI80N08S2-07
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPI80N08S2-07 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 80A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.4mOhm @ 66A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number SPI80N08S2-07 SPI80N08S2-07R   SPI80N06S2-07  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.4mOhm @ 66A, 10V 7.3mOhm @ 80A, 10V 6.6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 185 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6130 pF @ 25 V 5830 pF @ 25 V 4540 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3-1 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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