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| Part Number | SPI80N06S2-07 | SPI80N06S2-08 | SPI80N08S2-07 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 68A, 10V | 8mOhm @ 58A, 10V | 7.4mOhm @ 66A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 180µA | 4V @ 150µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 96 nC @ 10 V | 180 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V | 3800 pF @ 25 V | 6130 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 250W (Tc) | 215W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
