SPI20N60CFDHKSA1
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Infineon Technologies SPI20N60CFDHKSA1

Manufacturer No:
SPI20N60CFDHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPI20N60CFDHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 20.7A TO262-3
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number SPI20N60CFDHKSA1 SPI20N60CFDXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 220mOhm @ 13.1A, 10V -
Vgs(th) (Max) @ Id 5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 208W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3-1 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -

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