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| Part Number | SPI11N65C3HKSA1 | SPI11N65C3XKSA1 | SPI15N65C3HKSA1 | SPI11N60C3HKSA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | 650 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | 11A (Tc) | 15A (Tc) | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V | 380mOhm @ 7A, 10V | 280mOhm @ 9.4A, 10V | 380mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA | 3.9V @ 500µA | 3.9V @ 675µA | 3.9V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 60 nC @ 10 V | 63 nC @ 10 V | 60 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 1200 pF @ 25 V | 1600 pF @ 25 V | 1200 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 125W (Tc) | 125W (Tc) | 156W (Tc) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
