SPI11N60CFDHKSA1
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Infineon Technologies SPI11N60CFDHKSA1

Manufacturer No:
SPI11N60CFDHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPI11N60CFDHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 11A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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In Stock

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Similar Products

Part Number SPI11N60CFDHKSA1 SPI15N60CFDHKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 7A, 10V 330mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA 5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1820 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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