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| Part Number | SPI10N10L | SPI70N10L | SPI80N10L | SPI10N10 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) | 70A (Tc) | 80A (Tc) | 10.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V |
| Rds On (Max) @ Id, Vgs | 154mOhm @ 8.1A, 10V | 16mOhm @ 50A, 10V | 14mOhm @ 58A, 10V | 170mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 21µA | 2V @ 2mA | 2V @ 2mA | 4V @ 21µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 240 nC @ 10 V | 240 nC @ 10 V | 19.4 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 444 pF @ 25 V | 4540 pF @ 25 V | 4540 pF @ 25 V | 426 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 50W (Tc) | 250W (Tc) | 250W (Tc) | 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
