SPI08N80C3
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Infineon Technologies SPI08N80C3

Manufacturer No:
SPI08N80C3
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPI08N80C3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 8A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number SPI08N80C3 SPP08N80C3   SPI08N50C3  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V - 560 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) - 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V - 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 470µA - 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V - 32 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V - 750 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 104W (Tc) - 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package PG-TO262-3 - PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA - TO-262-3 Long Leads, I²Pak, TO-262AA

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