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| Part Number | SPI08N50C3XKSA1 | SPI08N80C3XKSA1 | SPI08N50C3HKSA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 560 V | 800 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) | 8A (Tc) | 7.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V | 650mOhm @ 5.1A, 10V | 600mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA | 3.9V @ 470µA | 3.9V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | 60 nC @ 10 V | 32 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V | 1100 pF @ 100 V | 750 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 83W (Tc) | 104W (Tc) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
