SPD50N03S2L-06
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Infineon Technologies SPD50N03S2L-06

Manufacturer No:
SPD50N03S2L-06
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD50N03S2L-06 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$0.63
299

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Similar Products

Part Number SPD50N03S2L-06 SPD50N03S2L-06G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 50A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.4mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2V @ 85µA -
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 136W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO252-3-11 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -

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