SPD30N03S2L-20
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Infineon Technologies SPD30N03S2L-20

Manufacturer No:
SPD30N03S2L-20
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD30N03S2L-20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number SPD30N03S2L-20 SPD30N03S2L-20G   SPD30N03S2L-10  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) - 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V - 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 23µA - 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V - 41.8 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V - 1550 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 60W (Tc) - 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3-11 - PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

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