SPD18P06PGBTMA1
  • Share:

Infineon Technologies SPD18P06PGBTMA1

Manufacturer No:
SPD18P06PGBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD18P06PGBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.6A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.66
492

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD18P06PGBTMA1 SPD08P06PGBTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6.2V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V 300mOhm @ 10A, 6.2V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 420 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

PJA3412_R1_00001
PJA3412_R1_00001
Panjit International Inc.
SOT-23, MOSFET
NTE2973
NTE2973
NTE Electronics, Inc
MOSFET-N-CHAN ENHANCEMENT TO-3P
BSZ440N10NS3GATMA1
BSZ440N10NS3GATMA1
Infineon Technologies
MOSFET N-CH 100V 5.3A/18A TSDSON
SUD20N10-66L-GE3
SUD20N10-66L-GE3
Vishay Siliconix
MOSFET N-CH 100V 16.9A TO252
HUF76145S3
HUF76145S3
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DMN67D7L-13
DMN67D7L-13
Diodes Incorporated
MOSFET N-CH 60V 210MA SOT23-3
NVMFS6H801NLT1G
NVMFS6H801NLT1G
onsemi
MOSFET N-CH 80V 24A/160A 5DFN
IRFRC20
IRFRC20
Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
HUFA75332G3
HUFA75332G3
onsemi
MOSFET N-CH 55V 60A TO247-3
IRFS3006PBF
IRFS3006PBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
STL9P2UH7
STL9P2UH7
STMicroelectronics
MOSFET P-CH 20V 9A POWERFLAT
APT12080JVR
APT12080JVR
Microsemi Corporation
MOSFET N-CH 1200V 15A ISOTOP

Related Product By Brand

IPP60R520C6
IPP60R520C6
Infineon Technologies
N-CHANNEL POWER MOSFET
BSP324 E6327
BSP324 E6327
Infineon Technologies
MOSFET N-CH 400V 170MA SOT223-4
SGP20N60XKSA1
SGP20N60XKSA1
Infineon Technologies
IGBT 600V 40A 179W TO220-3
IRS2538DSTRPBF
IRS2538DSTRPBF
Infineon Technologies
IC PFC/BALLAST CNTRL 85.6KHZ 8SO
TLS715B0EJV50XUMA1
TLS715B0EJV50XUMA1
Infineon Technologies
IC REG LIN 5V 150MA 8DSO E-PAD
TLS208D1LDV33XUMA1
TLS208D1LDV33XUMA1
Infineon Technologies
IC REG LINEAR 3.3V 800MA TSON-10
TDA21320XUMA1
TDA21320XUMA1
Infineon Technologies
IC REG CPU 1OUT LG-WIQFN-38-1
CY96F612ABPMC-GS-122UJE1
CY96F612ABPMC-GS-122UJE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB95F128JBPMC-GS-N2E1
MB95F128JBPMC-GS-N2E1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 100LQFP
CY7C1021CV33-12VXI
CY7C1021CV33-12VXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44SOJ
CY7C1021BNV33L-12ZXCT
CY7C1021BNV33L-12ZXCT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
S25FL128LAGNFI011
S25FL128LAGNFI011
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 8WSON