SPD18P06P
  • Share:

Infineon Technologies SPD18P06P

Manufacturer No:
SPD18P06P
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD18P06P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.6A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
162

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD18P06P SPD18P06PG   SPD08P06P  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type P-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 60 V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) - 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V - 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V - 13 nC @ 10 V
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V - 420 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 80W (Tc) - 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3 - PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

HUF75343S3
HUF75343S3
Harris Corporation
75 A, 55 V, 0.009 OHM, N-CHANNEL
STH47N60DM6-2AG
STH47N60DM6-2AG
STMicroelectronics
POWER TRANSISTORS
IRFHS8342TRPBF
IRFHS8342TRPBF
Infineon Technologies
MOSFET N-CH 30V 8.8A/19A TSDSON
IXFA3N120
IXFA3N120
IXYS
MOSFET N-CH 1200V 3A TO263
DMP4006SPSWQ-13
DMP4006SPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
DMN2310UTQ-13
DMN2310UTQ-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
DMN10H220LVT-13
DMN10H220LVT-13
Diodes Incorporated
MOSFET N-CH 100V 1.87A TSOT26
CSD22204W
CSD22204W
Texas Instruments
MOSFET P-CH 8V 5A 9DSBGA
DMTH10H1M7STLW-13
DMTH10H1M7STLW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI10
IRF7807D2PBF
IRF7807D2PBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
IRL3103D1SPBF
IRL3103D1SPBF
Infineon Technologies
MOSFET N-CH 30V 64A D2PAK
IXFT6N100F
IXFT6N100F
IXYS
MOSFET N-CH 1000V 6A TO268

Related Product By Brand

BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
IPSA70R450P7SAKMA1
IPSA70R450P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 10A TO251-3
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1
Infineon Technologies
IAUC120N04S6L012ATMA1
BSD316SNH6327XTSA1
BSD316SNH6327XTSA1
Infineon Technologies
MOSFET N-CH 30V 1.4A SOT363-6
IRFR12N25DCTRRP
IRFR12N25DCTRRP
Infineon Technologies
MOSFET N-CH 250V 14A DPAK
FP75R12KT4B11BOSA1
FP75R12KT4B11BOSA1
Infineon Technologies
IGBT MOD 1200V 75A 385W
IRG4BC20FD-STRL
IRG4BC20FD-STRL
Infineon Technologies
IGBT 600V 16A 60W D2PAK
MB90F345CAPFR-G
MB90F345CAPFR-G
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100QFP
MB90036APMC-GS-129E1
MB90036APMC-GS-129E1
Infineon Technologies
IC MCU 120LQFP
MB90F598GPF-G
MB90F598GPF-G
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CYDMX128B16-65BVXI
CYDMX128B16-65BVXI
Infineon Technologies
IC SRAM 128KBIT PAR 100VFBGA
S29PL127J60TAW130
S29PL127J60TAW130
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP