SPD15P10PLGBTMA1
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Infineon Technologies SPD15P10PLGBTMA1

Manufacturer No:
SPD15P10PLGBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD15P10PLGBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 15A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id:2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD15P10PLGBTMA1 SPD15P10PGBTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 11.3A, 10V 240mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id 2V @ 1.54mA 2.1V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 25 V 1280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 128W (Tc) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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