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| Part Number | SPD06N80C3ATMA1 | SPD06N80C3BTMA1 | SPD02N80C3ATMA1 | SPD04N80C3ATMA1 | SPD06N60C3ATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Discontinued at Digi-Key | Active | Active | Not For New Designs |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V | 800 V | 800 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | 6A (Ta) | 2A (Tc) | 4A (Tc) | 6.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.8A, 10V | 900mOhm @ 3.8A, 10V | 2.7Ohm @ 1.2A, 10V | 1.3Ohm @ 2.5A, 10V | 750mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA | 3.9V @ 250µA | 3.9V @ 120µA | 3.9V @ 240µA | 3.9V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | 41 nC @ 10 V | 16 nC @ 10 V | 31 nC @ 10 V | 31 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V | 785 pF @ 100 V | 290 pF @ 100 V | 570 pF @ 100 V | 620 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 83W (Tc) | 83W (Tc) | 42W (Tc) | 63W (Tc) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3-11 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
