SPD06N60C3BTMA1
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Infineon Technologies SPD06N60C3BTMA1

Manufacturer No:
SPD06N60C3BTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD06N60C3BTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6.2A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD06N60C3BTMA1 SPD06N80C3BTMA1   SPD07N60C3BTMA1   SPD01N60C3BTMA1   SPD02N60C3BTMA1   SPD03N60C3BTMA1   SPD04N60C3BTMA1   SPD06N60C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 800 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) 6A (Ta) 7.3A (Tc) 800mA (Tc) 1.8A (Tc) 3.2A (Tc) 4.5A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 3.9A, 10V 900mOhm @ 3.8A, 10V 600mOhm @ 4.6A, 10V 6Ohm @ 500mA, 10V 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 260µA 3.9V @ 250µA 3.9V @ 350µA 3.9V @ 250µA 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 41 nC @ 10 V 27 nC @ 10 V 5 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V 785 pF @ 100 V 790 pF @ 25 V 100 pF @ 25 V 200 pF @ 25 V 400 pF @ 25 V 490 pF @ 25 V 620 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 74W (Tc) 83W (Tc) 83W (Tc) 11W (Tc) 25W (Tc) 38W (Tc) 50W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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