SPD04P10PLGBTMA1
  • Share:

Infineon Technologies SPD04P10PLGBTMA1

Manufacturer No:
SPD04P10PLGBTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD04P10PLGBTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 4.2A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2V @ 380µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:372 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.99
319

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD04P10PLGBTMA1 SPD04P10PGBTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3A, 10V 1Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 2V @ 380µA 4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V 319 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SSM6K405TU,LF
SSM6K405TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 2A UF6
XR46000ESETR
XR46000ESETR
MaxLinear, Inc.
MOSFET N-CH 600V 1.5A SOT223
BSR316PH6327XTSA1
BSR316PH6327XTSA1
Infineon Technologies
MOSFET P-CH 100V 360MA SC59
SQ3457EV-T1_BE3
SQ3457EV-T1_BE3
Vishay Siliconix
MOSFET P-CHANNEL 30V 6.8A 6TSOP
SIHS36N50D-GE3
SIHS36N50D-GE3
Vishay Siliconix
D SERIES POWER MOSFET SUPER-247,
PSMN5R0-40MSHX
PSMN5R0-40MSHX
Nexperia USA Inc.
MOSFET N-CH 40V 85A LFPAK33
IPL60R180P6AUMA1
IPL60R180P6AUMA1
Infineon Technologies
MOSFET N-CH 600V 22.4A 4VSON
IRFR9014TRL
IRFR9014TRL
Vishay Siliconix
MOSFET P-CH 60V 5.1A DPAK
IRF1010EL
IRF1010EL
Infineon Technologies
MOSFET N-CH 60V 84A TO262
IPP100N06S3L-03
IPP100N06S3L-03
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
SI7100DN-T1-E3
SI7100DN-T1-E3
Vishay Siliconix
MOSFET N-CH 8V 35A PPAK1212-8
AON6210
AON6210
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 28A/85A 8DFN

Related Product By Brand

BSC900N20NS3GATMA1
BSC900N20NS3GATMA1
Infineon Technologies
MOSFET N-CH 200V 15.2A TDSON-8
IRFZ48NSPBF
IRFZ48NSPBF
Infineon Technologies
MOSFET N-CH 55V 64A D2PAK
IRFS3107PBF
IRFS3107PBF
Infineon Technologies
MOSFET N-CH 75V 195A D2PAK
IPD80N06S3-09
IPD80N06S3-09
Infineon Technologies
MOSFET N-CH 55V 80A TO252-3
FS25R12W1T7BOMA1
FS25R12W1T7BOMA1
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
SAB-C165-LF3V
SAB-C165-LF3V
Infineon Technologies
SAB-C165-LF 3V HA - LEGACY 16-BI
PEB55508EV1.2
PEB55508EV1.2
Infineon Technologies
GEMINAX MULTIPORT INTEGRATED ADS
MB90349CASPFV-GS-750E1
MB90349CASPFV-GS-750E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
MB96F356YSBPMC1-GE2
MB96F356YSBPMC1-GE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 64LQFP
MB96F615RBPMC-GSAE1
MB96F615RBPMC-GSAE1
Infineon Technologies
IC MCU 16BIT 160KB FLASH 48LQFP
CY7C139-25JXC
CY7C139-25JXC
Infineon Technologies
IC SRAM 36KBIT PARALLEL 68PLCC
S29GL256P11TAIV20
S29GL256P11TAIV20
Infineon Technologies
IC FLASH 256MBIT PARALLEL 56TSOP