SPD04N80C3BTMA1
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Infineon Technologies SPD04N80C3BTMA1

Manufacturer No:
SPD04N80C3BTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD04N80C3BTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD04N80C3BTMA1 SPD06N80C3BTMA1   SPD02N80C3BTMA1   SPD04N50C3BTMA1   SPD04N60C3BTMA1   SPD04N80C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 560 V 650 V 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 6A (Ta) 2A (Tc) 4.5A (Tc) 4.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V 900mOhm @ 3.8A, 10V 2.7Ohm @ 1.2A, 10V 950mOhm @ 2.8A, 10V 950mOhm @ 2.8A, 10V 1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA 3.9V @ 250µA 3.9V @ 120µA 3.9V @ 200µA 3.9V @ 200µA 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 41 nC @ 10 V 16 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V 785 pF @ 100 V 290 pF @ 100 V 470 pF @ 25 V 490 pF @ 25 V 570 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 63W (Tc) 83W (Tc) 42W (Tc) 50W (Tc) 50W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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