SPD04N80C3ATMA1
  • Share:

Infineon Technologies SPD04N80C3ATMA1

Manufacturer No:
SPD04N80C3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD04N80C3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.09
202

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD04N80C3ATMA1 SPD06N80C3ATMA1   SPD04N80C3BTMA1   SPD02N80C3ATMA1   SPD04N50C3ATMA1   SPD04N60C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 6A (Ta) 4A (Tc) 2A (Tc) 4.5A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V 900mOhm @ 3.8A, 10V 1.3Ohm @ 2.5A, 10V 2.7Ohm @ 1.2A, 10V 950mOhm @ 2.8A, 10V 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA 3.9V @ 250µA 3.9V @ 240µA 3.9V @ 120µA 3.9V @ 200µA 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 41 nC @ 10 V 26 nC @ 10 V 16 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V 785 pF @ 100 V 570 pF @ 25 V 290 pF @ 100 V 470 pF @ 25 V 490 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 63W (Tc) 83W (Tc) 63W (Tc) 42W (Tc) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3-11 PG-TO252-3 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

DN3765K4-G
DN3765K4-G
Microchip Technology
MOSFET N-CH 650V 300MA TO252-3
H5N2513PL-E
H5N2513PL-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDPF10N50UT
FDPF10N50UT
Fairchild Semiconductor
MOSFET N-CH 500V 8A TO220F
MCU60N04-TP
MCU60N04-TP
Micro Commercial Co
MOSFET N-CH 40V 60A DPAK
IXTA06N120P
IXTA06N120P
IXYS
MOSFET N-CH 1200V 600MA TO263
SIR150DP-T1-RE3
SIR150DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 45V 30.9A/110A PPAK
FDS3572
FDS3572
onsemi
MOSFET N-CH 80V 8.9A 8SOIC
TK750A60F,S4X
TK750A60F,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 10A TO220SIS
CDM3-800 TR13 PBFREE
CDM3-800 TR13 PBFREE
Central Semiconductor Corp
MOSFET N-CH 800V 3A DPAK
STB26N60M2
STB26N60M2
STMicroelectronics
MOSFET N-CHANNEL 600V 20A D2PAK
NTB10N60
NTB10N60
onsemi
N-CHANNEL POWER MOSFET
SCH1436-TL-W
SCH1436-TL-W
onsemi
MOSFET N-CH 30V 1.8A SOT563/SCH6

Related Product By Brand

IPD90N06S405ATMA2
IPD90N06S405ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO252-31
IPA60R299CP
IPA60R299CP
Infineon Technologies
600V COOLMOS POWER TRANSISTOR
IRF7422D2TR
IRF7422D2TR
Infineon Technologies
MOSFET P-CH 20V 4.3A 8SO
IR2135SPBF
IR2135SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
IP1202TR
IP1202TR
Infineon Technologies
IC REG BUCK ADJ SGL/DL 161BGA
CY7B994V-2BBXI
CY7B994V-2BBXI
Infineon Technologies
IC CLK BUFF 18OUT 200MHZ 100LBGA
CY22388ZXC-24T
CY22388ZXC-24T
Infineon Technologies
IC CLOCK GENERATOR
MB91F467BAPMC-GSE2-W015
MB91F467BAPMC-GSE2-W015
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
MB91F467BAPMC-GSE2-W020
MB91F467BAPMC-GSE2-W020
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
CY62157ELL-55ZSXE
CY62157ELL-55ZSXE
Infineon Technologies
IC SRAM 8MBIT PARALLEL 44TSOP II
S29GL01GS10DHA013
S29GL01GS10DHA013
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
FM25640B-GATR
FM25640B-GATR
Infineon Technologies
IC FRAM 64KBIT SPI 4MHZ 8SOIC