SPD04N60C3ATMA1
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Infineon Technologies SPD04N60C3ATMA1

Manufacturer No:
SPD04N60C3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD04N60C3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4.5A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD04N60C3ATMA1 SPD04N80C3ATMA1   SPD07N60C3ATMA1   SPD06N60C3ATMA1   SPD04N60C3BTMA1   SPD03N60C3ATMA1   SPD04N50C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Not For New Designs Obsolete Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V 600 V 600 V 650 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4A (Tc) 7.3A (Tc) 6.2A (Tc) 4.5A (Tc) 3.2A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V 1.3Ohm @ 2.5A, 10V 600mOhm @ 4.6A, 10V 750mOhm @ 3.9A, 10V 950mOhm @ 2.8A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA 3.9V @ 240µA 3.9V @ 350µA 3.9V @ 260µA 3.9V @ 200µA 3.9V @ 135µA 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 31 nC @ 10 V 27 nC @ 10 V 31 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V 570 pF @ 100 V 790 pF @ 25 V 620 pF @ 25 V 490 pF @ 25 V 400 pF @ 25 V 470 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 50W (Tc) 63W (Tc) 83W (Tc) 74W (Tc) 50W (Tc) 38W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3-313 PG-TO252-3 PG-TO252-3-11 PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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