SPD03N60S5
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Infineon Technologies SPD03N60S5

Manufacturer No:
SPD03N60S5
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPD03N60S5 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD03N60S5 SPD07N60S5   SPD04N60S5  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 7.3A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V 600mOhm @ 4.6A, 10V 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 135µA 5.5V @ 350µA 5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 35 nC @ 10 V 22.9 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V 970 pF @ 25 V 580 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 38W (Tc) 83W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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