SPD03N60C3ATMA1
  • Share:

Infineon Technologies SPD03N60C3ATMA1

Manufacturer No:
SPD03N60C3ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD03N60C3ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 3.2A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.81
384

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD03N60C3ATMA1 SPD07N60C3ATMA1   SPD04N60C3ATMA1   SPD06N60C3ATMA1   SPD03N60C3BTMA1   SPD03N50C3ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs Not For New Designs Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 7.3A (Tc) 4.5A (Tc) 6.2A (Tc) 3.2A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V 600mOhm @ 4.6A, 10V 950mOhm @ 2.8A, 10V 750mOhm @ 3.9A, 10V 1.4Ohm @ 2A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135µA 3.9V @ 350µA 3.9V @ 200µA 3.9V @ 260µA 3.9V @ 135µA 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 27 nC @ 10 V 25 nC @ 10 V 31 nC @ 10 V 17 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 790 pF @ 25 V 490 pF @ 25 V 620 pF @ 25 V 400 pF @ 25 V 350 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 38W (Tc) 83W (Tc) 50W (Tc) 74W (Tc) 38W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3-313 PG-TO252-3 PG-TO252-3 PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXTH10P50P
IXTH10P50P
IXYS
MOSFET P-CH 500V 10A TO247
NTP082N65S3HF
NTP082N65S3HF
onsemi
MOSFET N-CH 650V 40A TO220-3
DMT10H015LSS-13
DMT10H015LSS-13
Diodes Incorporated
MOSFET N-CH 100V 8.3A 8SO
NVD6416ANLT4G-001-VF01
NVD6416ANLT4G-001-VF01
onsemi
NVD6416 - N-CHANNEL POWER MOSFET
SPI08N50C3XKSA1
SPI08N50C3XKSA1
Infineon Technologies
MOSFET N-CH 560V 7.6A TO262-3
NTB30N06L
NTB30N06L
onsemi
MOSFET N-CH 60V 30A D2PAK
IXTU01N80
IXTU01N80
IXYS
MOSFET N-CH 800V 100MA TO251
SIHF8N50L-E3
SIHF8N50L-E3
Vishay Siliconix
MOSFET N-CH 500V 8A TO220
AOL1712
AOL1712
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 16A/65A ULTRASO8
3LP01SS-TL-E
3LP01SS-TL-E
onsemi
MOSFET P-CH 30V 100MA 3SSFP
2N7002BKM/V,315
2N7002BKM/V,315
NXP Semiconductors
NEXPERIA 2N7002BKM - SMALL SIGNA
RK7002T116
RK7002T116
Rohm Semiconductor
MOSFET N-CH 60V 115MA SST3

Related Product By Brand

IDH10SG60CXKSA1
IDH10SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
IPC90N04S53R6ATMA1
IPC90N04S53R6ATMA1
Infineon Technologies
MOSFET N-CH 40V 90A 8TDSON-34
IPA65R600E6XKSA1
IPA65R600E6XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP
IR2136JPBF
IR2136JPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 44PLCC
MB89635RPF-G-1489E1
MB89635RPF-G-1489E1
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
CY89697BPFM-G-338E1
CY89697BPFM-G-338E1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
CY7C1670KV18-550BZXC
CY7C1670KV18-550BZXC
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA
CY7C1041DV33-10BVXI
CY7C1041DV33-10BVXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
CYDC064B08-55AXI
CYDC064B08-55AXI
Infineon Technologies
IC SRAM 64KBIT PARALLEL 100TQFP
CYDMX256A16-90BVXI
CYDMX256A16-90BVXI
Infineon Technologies
IC SRAM 256KBIT PAR 100VFBGA
CY7C25652KV18-400BZI
CY7C25652KV18-400BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CYRF89435-68LTXC
CYRF89435-68LTXC
Infineon Technologies
IC RF TXRX+MCU ISM>1GHZ 68VFQFN