SPD03N60C3
  • Share:

Infineon Technologies SPD03N60C3

Manufacturer No:
SPD03N60C3
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPD03N60C3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 3.2A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
122

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD03N60C3 SPD04N60C3   SPD07N60C3   SPD02N60C3  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V 600 V 600 V -
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 4.5A (Tc) 7.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V -
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 350µA -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 25 nC @ 10 V 27 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 490 pF @ 25 V 790 pF @ 25 V -
FET Feature - - - -
Power Dissipation (Max) 38W (Tc) 50W (Tc) 83W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TO252-3-313 PG-TO252-3 PG-TO252-3 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -

Related Product By Categories

IPD50R380CEAUMA1
IPD50R380CEAUMA1
Infineon Technologies
MOSFET N-CH 500V 14.1A TO252-3
FDMS030N06B
FDMS030N06B
onsemi
MOSFET N-CH 60V 22.1A/100A 8PQFN
GPI65005DF
GPI65005DF
GaNPower
GANFET N-CH 650V 5A DFN 5X6
FDD850N10L
FDD850N10L
onsemi
MOSFET N-CH 100V 15.7A DPAK
SI7143DP-T1-GE3
SI7143DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 35A PPAK SO-8
SUD20N10-66L-GE3
SUD20N10-66L-GE3
Vishay Siliconix
MOSFET N-CH 100V 16.9A TO252
STH130N8F7-2
STH130N8F7-2
STMicroelectronics
MOSFET N-CH 80V 110A H2PAK-2
IRFBL3315
IRFBL3315
Infineon Technologies
MOSFET N-CH 150V 21A SUPER D2PAK
IXFR38N80Q2
IXFR38N80Q2
IXYS
MOSFET N-CH 800V 28A ISOPLUS247
SCH1334-TL-H
SCH1334-TL-H
onsemi
MOSFET P-CH 12V 1.6A 6SCH
AOT12N65_001
AOT12N65_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 12A TO220
HAT2173H-EL-E
HAT2173H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 100V 25A LFPAK

Related Product By Brand

IRDC3622S
IRDC3622S
Infineon Technologies
BOARD EVALUATION W/IR3622MPBF
KIT_TC1793_SK
KIT_TC1793_SK
Infineon Technologies
AUDO TC1793 EVAL BRD
BB644E7904HTSA1
BB644E7904HTSA1
Infineon Technologies
DIODE VAR CAP 30V 20MA SOD-323
BCR169E6327
BCR169E6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
BF20-40E6814
BF20-40E6814
Infineon Technologies
RF N-CHANNEL MOSFET
IRF7233TR
IRF7233TR
Infineon Technologies
MOSFET P-CH 12V 9.5A 8SO
SLB9635TT12FW319XUMA1
SLB9635TT12FW319XUMA1
Infineon Technologies
SECURITY IC'S/AUTHENTICATION IC'
TLF2931G V50
TLF2931G V50
Infineon Technologies
IC REG LINEAR FIXED LDO REG
CY2410SXC-5
CY2410SXC-5
Infineon Technologies
IC MPEG CLOCK GEN 8-SOIC
MB90F020CPMT-GS-9092
MB90F020CPMT-GS-9092
Infineon Technologies
IC MCU 120LQFP
CY7C1041GE30-10VXIT
CY7C1041GE30-10VXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44SOJ
CY90F387SPMT-GE1
CY90F387SPMT-GE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP