SPD02N60C3BTMA1
  • Share:

Infineon Technologies SPD02N60C3BTMA1

Manufacturer No:
SPD02N60C3BTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD02N60C3BTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 1.8A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
103

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPD02N60C3BTMA1 SPD03N60C3BTMA1   SPD04N60C3BTMA1   SPD07N60C3BTMA1   SPD02N80C3BTMA1   SPD06N60C3BTMA1   SPD01N60C3BTMA1   SPD02N50C3BTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 800 V 650 V 650 V -
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 3.2A (Tc) 4.5A (Tc) 7.3A (Tc) 2A (Tc) 6.2A (Tc) 800mA (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V 2.7Ohm @ 1.2A, 10V 750mOhm @ 3.9A, 10V 6Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 350µA 3.9V @ 120µA 3.9V @ 260µA 3.9V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 27 nC @ 10 V 16 nC @ 10 V 31 nC @ 10 V 5 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 400 pF @ 25 V 490 pF @ 25 V 790 pF @ 25 V 290 pF @ 100 V 620 pF @ 25 V 100 pF @ 25 V -
FET Feature - - - - - - - -
Power Dissipation (Max) 25W (Tc) 38W (Tc) 50W (Tc) 83W (Tc) 42W (Tc) 74W (Tc) 11W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3 PG-TO252-3-11 PG-TO252-3-11 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -

Related Product By Categories

IMZA65R083M1HXKSA1
IMZA65R083M1HXKSA1
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
DMN4036LK3-13
DMN4036LK3-13
Diodes Incorporated
MOSFET N-CH 40V 8.5A TO252-3
AOB25S65L
AOB25S65L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 25A TO263
IRFR430ATRLPBF
IRFR430ATRLPBF
Vishay Siliconix
MOSFET N-CH 500V 5A DPAK
PSMN2R2-40PS,127
PSMN2R2-40PS,127
Nexperia USA Inc.
MOSFET N-CH 40V 100A TO220AB
IPB80P03P405ATMA1
IPB80P03P405ATMA1
Infineon Technologies
MOSFET P-CH 30V 80A TO263-3
BSL207SPL6327HTSA1
BSL207SPL6327HTSA1
Infineon Technologies
MOSFET P-CH 20V 6A TSOP-6
IXFR21N100Q
IXFR21N100Q
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
IRF7854PBF
IRF7854PBF
Infineon Technologies
MOSFET N-CH 80V 10A 8SO
IRFH7921TRPBF
IRFH7921TRPBF
Infineon Technologies
MOSFET N-CH 30V 15A/34A PQFN
AOB414_001
AOB414_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 6.6A/51A TO263

Related Product By Brand

BCW68GE6327HTSA1
BCW68GE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.8A SOT23
IPA60R330P6XKSA1
IPA60R330P6XKSA1
Infineon Technologies
MOSFET N-CH 600V 12A TO220-FP
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
TC214L8F133NACKXUMA1
TC214L8F133NACKXUMA1
Infineon Technologies
IC MCU 32BIT 512KB FLASH 144TQFP
IR21365SPBF
IR21365SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
CY7C64013C-SXCT
CY7C64013C-SXCT
Infineon Technologies
IC MCU 8K FULL SPEED USB 28SOIC
CY9AFA44LBPMC1-G-JNE2
CY9AFA44LBPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64LQFP
MB90F346ASPMC-GS
MB90F346ASPMC-GS
Infineon Technologies
IC MCU 16BIT 64KB FLASH 100LQFP
CY8C20111-SX1IT
CY8C20111-SX1IT
Infineon Technologies
IC CAPSENSE EXP 8-SOIC
S29GL064S70FHI013
S29GL064S70FHI013
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA
S29JL064J60BHA000
S29JL064J60BHA000
Infineon Technologies
IC FLASH 64MBIT PARALLEL 48FBGA
CY7C1615KV18-333BZXC
CY7C1615KV18-333BZXC
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA