SPD02N60C3BTMA1
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Infineon Technologies SPD02N60C3BTMA1

Manufacturer No:
SPD02N60C3BTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD02N60C3BTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 1.8A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number SPD02N60C3BTMA1 SPD03N60C3BTMA1   SPD04N60C3BTMA1   SPD07N60C3BTMA1   SPD02N80C3BTMA1   SPD06N60C3BTMA1   SPD01N60C3BTMA1   SPD02N50C3BTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 800 V 650 V 650 V -
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 3.2A (Tc) 4.5A (Tc) 7.3A (Tc) 2A (Tc) 6.2A (Tc) 800mA (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V 1.4Ohm @ 2A, 10V 950mOhm @ 2.8A, 10V 600mOhm @ 4.6A, 10V 2.7Ohm @ 1.2A, 10V 750mOhm @ 3.9A, 10V 6Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 3.9V @ 80µA 3.9V @ 135µA 3.9V @ 200µA 3.9V @ 350µA 3.9V @ 120µA 3.9V @ 260µA 3.9V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 27 nC @ 10 V 16 nC @ 10 V 31 nC @ 10 V 5 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 400 pF @ 25 V 490 pF @ 25 V 790 pF @ 25 V 290 pF @ 100 V 620 pF @ 25 V 100 pF @ 25 V -
FET Feature - - - - - - - -
Power Dissipation (Max) 25W (Tc) 38W (Tc) 50W (Tc) 83W (Tc) 42W (Tc) 74W (Tc) 11W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3-11 PG-TO252-3 PG-TO252-3-11 PG-TO252-3-11 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -

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