SPD02N50C3
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Infineon Technologies SPD02N50C3

Manufacturer No:
SPD02N50C3
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPD02N50C3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 1.8A TO252-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$0.35
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Similar Products

Part Number SPD02N50C3 SPD02N60C3   SPD08N50C3  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V - 500 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) - 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V - 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA - 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V - 32 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V - 750 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 25W (Tc) - 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO252-3-11 - PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63

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