SPB80N06S2L-H5
  • Share:

Infineon Technologies SPB80N06S2L-H5

Manufacturer No:
SPB80N06S2L-H5
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB80N06S2L-H5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
338

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB80N06S2L-H5 SPB80N06S2-H5   SPB80N06S2L-05  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V 5.5mOhm @ 80A, 10V 4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 230µA 4V @ 230µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 155 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 25 V 5500 pF @ 25 V 7530 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDFS2P103
FDFS2P103
Fairchild Semiconductor
MOSFET P-CH 30V 5.3A 8SOIC
STF35N60DM2
STF35N60DM2
STMicroelectronics
MOSFET N-CH 600V 28A TO220FP
FQP13N50C
FQP13N50C
onsemi
MOSFET N-CH 500V 13A TO220-3
SI2343CDS-T1-GE3
SI2343CDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 5.9A SOT23-3
STT4P3LLH6
STT4P3LLH6
STMicroelectronics
MOSFET P-CH 30V 4A SOT23-6
STD7NK40ZT4
STD7NK40ZT4
STMicroelectronics
MOSFET N-CH 400V 5.4A DPAK
APT58F50J
APT58F50J
Microchip Technology
MOSFET N-CH 500V 58A ISOTOP
SPB35N10T
SPB35N10T
Infineon Technologies
MOSFET N-CH 100V 35A TO263-3
NTD4857N-1G
NTD4857N-1G
onsemi
MOSFET N-CH 25V 12A/78A IPAK
PSMN7R5-25YLC,115
PSMN7R5-25YLC,115
NXP USA Inc.
MOSFET N-CH 25V 56A LFPAK56
AO4448
AO4448
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 10A 8SOIC
RD3U080AAFRATL
RD3U080AAFRATL
Rohm Semiconductor
250V 8A TO-252, AUTOMOTIVE POWER

Related Product By Brand

IDP06E60XKSA1
IDP06E60XKSA1
Infineon Technologies
RECTIFIER DIODE, 14.7A, 600V
D251K12BXPSA1
D251K12BXPSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 255A
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
SP000629364
SP000629364
Infineon Technologies
IPP60R950C6 - 600V N-CHANNEL
IPS80R1K4P7AKMA1
IPS80R1K4P7AKMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO251-3
IRFH5250TR2PBF
IRFH5250TR2PBF
Infineon Technologies
MOSFET N-CH 25V 45A PQFN
IPA50R190CE
IPA50R190CE
Infineon Technologies
MOSFET N-CH 500V 18.5A TO220-FP
TLE9832QVXUMA3
TLE9832QVXUMA3
Infineon Technologies
TLE9832 - SMART LIN-BASED RELAY
C165LF3VHABXUMA1
C165LF3VHABXUMA1
Infineon Technologies
C165LF - LEGACY 16-BIT MICROCONT
S25FS064SDSBHI020
S25FS064SDSBHI020
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 24FBGA
STK17TA8-RF45ITR
STK17TA8-RF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
CY7C10612DV33-10ZSXI
CY7C10612DV33-10ZSXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II