SPB80N06S2-05
  • Share:

Infineon Technologies SPB80N06S2-05

Manufacturer No:
SPB80N06S2-05
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB80N06S2-05 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
373

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB80N06S2-05 SPB80N06S2-07   SPB80N06S2-08   SPB80N06S2-09   SPB80N06S2-H5   SPB80N06S2L-05  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V 6.6mOhm @ 68A, 10V 8mOhm @ 58A, 10V 9.1mOhm @ 50A, 10V 5.5mOhm @ 80A, 10V 4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 180µA 4V @ 150µA 4V @ 125µA 4V @ 230µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 110 nC @ 10 V 96 nC @ 10 V 80 nC @ 10 V 155 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6790 pF @ 25 V 4540 pF @ 25 V 3800 pF @ 25 V 3140 pF @ 25 V 5500 pF @ 25 V 7530 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 215W (Tc) 190W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQI9N25CTU
FQI9N25CTU
Fairchild Semiconductor
MOSFET N-CH 250V 8.8A I2PAK
ZXMP3A17E6TA
ZXMP3A17E6TA
Diodes Incorporated
MOSFET P-CH 30V 3.2A SOT-23-6
TK42A12N1,S4X
TK42A12N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 42A TO220SIS
IPC100N04S5L2R6ATMA1
IPC100N04S5L2R6ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A 8TDSON-34
SI2392ADS-T1-BE3
SI2392ADS-T1-BE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET
IRF530
IRF530
onsemi
MOSFET N-CH 100V 14A TO220AB
SIHF540STRL-GE3
SIHF540STRL-GE3
Vishay Siliconix
MOSFET N-CH 100V 28A D2PAK
SI7868ADP-T1-GE3
SI7868ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 40A PPAK SO-8
IXTP26P10T
IXTP26P10T
IXYS
MOSFET P-CH 100V 26A TO220AB
APT20M45SVRG
APT20M45SVRG
Microchip Technology
MOSFET N-CH 200V 56A D3PAK
HUFA76619D3
HUFA76619D3
onsemi
MOSFET N-CH 100V 18A IPAK
SI1300BDL-T1-GE3
SI1300BDL-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 400MA SC70-3

Related Product By Brand

SPA15N65C3
SPA15N65C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRF6795MTRPBF
IRF6795MTRPBF
Infineon Technologies
IRF6795 - 12V-300V N-CHANNEL POW
IPB100N12S305ATMA1
IPB100N12S305ATMA1
Infineon Technologies
MOSFET N-CH 120V 100A TO263-3
IRF6618TR1
IRF6618TR1
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
IRGIB10B60KD1P
IRGIB10B60KD1P
Infineon Technologies
IGBT 600V 16A 44W TO220FP
MB90025FPMT-GS-246E1
MB90025FPMT-GS-246E1
Infineon Technologies
IC MCU 120LQFP
MB96F387RSAPMCR-GSE2
MB96F387RSAPMCR-GSE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
S25FL128LAGMFI003
S25FL128LAGMFI003
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1011G30-10BAJXET
CY7C1011G30-10BAJXET
Infineon Technologies
IC SRAM 2MBIT PARALLEL 48FBGA
CY7C1514AV18-200BZC
CY7C1514AV18-200BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S34ML01G200BHB003
S34ML01G200BHB003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA