SPB47N10
  • Share:

Infineon Technologies SPB47N10

Manufacturer No:
SPB47N10
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB47N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 47A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
367

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB47N10 SPB47N10L  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 33A, 10V 26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 175W (Tc) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFB7446PBF
IRFB7446PBF
Infineon Technologies
MOSFET N-CH 40V 120A TO220AB
MCH6336-TL-E-ON
MCH6336-TL-E-ON
onsemi
MOSFET P-CH 12V 5A SC88FL/ MCPH6
FDFMJ2P023Z
FDFMJ2P023Z
Fairchild Semiconductor
MOSFET P-CH 20V 2.9A SC75 MICROF
IPBE65R099CFD7AATMA1
IPBE65R099CFD7AATMA1
Infineon Technologies
MOSFET N-CH 650V 24A TO263-7
FDPF10N60NZ
FDPF10N60NZ
onsemi
MOSFET N-CH 600V 10A TO220F
ZXMN3B14FTA
ZXMN3B14FTA
Diodes Incorporated
MOSFET N-CH 30V 2.9A SOT23-3
BSP171PH6327XTSA1
BSP171PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
BSC032NE2LSATMA1
BSC032NE2LSATMA1
Infineon Technologies
MOSFET N-CH 25V 22A/84A TDSON
SPB07N60C3
SPB07N60C3
Infineon Technologies
SPB07N60 - 600V COOLMOS N-CHANNE
IRFSL31N20DTRL
IRFSL31N20DTRL
Vishay Siliconix
MOSFET N-CH 200V 31A I2PAK
ZXMN6A10N8TA
ZXMN6A10N8TA
Diodes Incorporated
MOSFET N-CH 60V 7.6A 8-SOIC
TPCC8066-H,LQ(S
TPCC8066-H,LQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 11A 8TSON

Related Product By Brand

BSZ0502NSIATMA1
BSZ0502NSIATMA1
Infineon Technologies
MOSFET N-CH 30V 22A/40A TSDSON
IPD65R1K4CFDBTMA1
IPD65R1K4CFDBTMA1
Infineon Technologies
MOSFET N-CH 650V 2.8A TO252-3
IRF7478TRPBF-1
IRF7478TRPBF-1
Infineon Technologies
MOSFET N-CH 60V 7A 8SO
FS100R12KT4GB11BOSA1
FS100R12KT4GB11BOSA1
Infineon Technologies
IGBT MOD 1200V 100A 515W
IRS2110PBF
IRS2110PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14DIP
IRS2153DPBF
IRS2153DPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
CY22800FXC-020A
CY22800FXC-020A
Infineon Technologies
IC PROG CLOCK GEN 8-SOIC
MB90427GAVPF-GS-319
MB90427GAVPF-GS-319
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB90598GPFR-G-130-BND
MB90598GPFR-G-130-BND
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY90349CASPFV-GS-767E1
CY90349CASPFV-GS-767E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
CY7C2544KV18-300BZI
CY7C2544KV18-300BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY9BF104NAPMC-G-JNE1
CY9BF104NAPMC-G-JNE1
Infineon Technologies
IC MEM MM MCU 100QFP