SPB35N10T
  • Share:

Infineon Technologies SPB35N10T

Manufacturer No:
SPB35N10T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB35N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 35A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB35N10T SPB35N10  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V 44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 25 V 1570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFR9110TRPBF
IRFR9110TRPBF
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
2SJ128-AZ
2SJ128-AZ
Renesas Electronics America Inc
POWER MOSFET
IXFA130N10T2
IXFA130N10T2
IXYS
MOSFET N-CH 100V 130A TO263
TK14A65W5,S5X
TK14A65W5,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A TO220SIS
IPW65R110CFDFKSA1
IPW65R110CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V 31.2A TO247-3
DMN6075S-13
DMN6075S-13
Diodes Incorporated
MOSFET N-CH 60V 2A SOT23
SIR4604DP-T1-GE3
SIR4604DP-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
NTBG080N120SC1
NTBG080N120SC1
onsemi
SICFET N-CH 1200V 30A D2PAK-7
IXFH75N10
IXFH75N10
IXYS
MOSFET N-CH 100V 75A TO247AD
NTMS4107NR2G
NTMS4107NR2G
onsemi
MOSFET N-CH 30V 11A 8SOIC
NVMFS5C404NT1G
NVMFS5C404NT1G
onsemi
MOSFET N-CH 40V 49A 5DFN
R6015ANJTL
R6015ANJTL
Rohm Semiconductor
MOSFET N-CH 600V 15A LPTS

Related Product By Brand

IDH05SG60CXKSA1
IDH05SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IPP120N04S3-02
IPP120N04S3-02
Infineon Technologies
PFET, 120A I(D), 40V, 0.0023OHM,
IPP65R280C6XKSA1
IPP65R280C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 13.8A TO220-3
IHW30N160R2FKSA1
IHW30N160R2FKSA1
Infineon Technologies
IGBT 1600V 60A 312W TO247-3
IPW60R099P7
IPW60R099P7
Infineon Technologies
600V, 0.099OHM, N-CHANNEL MOSFET
CY8C21123-24SXI
CY8C21123-24SXI
Infineon Technologies
IC MCU 8BIT 4KB FLASH 8SOIC
S29GL128P11FFIV23
S29GL128P11FFIV23
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
S70KS1283GABHV020
S70KS1283GABHV020
Infineon Technologies
IC PSRAM 128MBIT SPI/OCTL 24FBGA
S29AS008J70TFI030
S29AS008J70TFI030
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48TSOP
S34MS04G100BHI000
S34MS04G100BHI000
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA
CY90F335APMC1-G-SPE1
CY90F335APMC1-G-SPE1
Infineon Technologies
IC MEM MM MCU 120LQFP