SPB21N10
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Infineon Technologies SPB21N10

Manufacturer No:
SPB21N10
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB21N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 21A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs:38.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:865 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number SPB21N10 SPB21N10T  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 10V 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 44µA 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs 38.4 nC @ 10 V 38.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 25 V 865 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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