SPB18P06P
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Infineon Technologies SPB18P06P

Manufacturer No:
SPB18P06P
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB18P06P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.7A D2PAK
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):81.1W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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Similar Products

Part Number SPB18P06P SPB18P06PG   SPB08P06P  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type P-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 60 V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta) - 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V - 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V - 13 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V - 420 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 81.1W (Ta) - 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO263-3 - PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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