SPB18P06P
  • Share:

Infineon Technologies SPB18P06P

Manufacturer No:
SPB18P06P
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
SPB18P06P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 18.7A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):81.1W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
267

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPB18P06P SPB18P06PG   SPB08P06P  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type P-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 60 V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta) - 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V - 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V - 13 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V - 420 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 81.1W (Ta) - 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO263-3 - PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

SIHD5N80AE-GE3
SIHD5N80AE-GE3
Vishay Siliconix
E SERIES POWER MOSFET DPAK (TO-2
NTNS3C68NZT5G
NTNS3C68NZT5G
onsemi
SINGLE N-CHANNEL SMALL SIGNAL MO
DMP6180SK3-13
DMP6180SK3-13
Diodes Incorporated
MOSFET P-CH 60V 14A TO252
IXTY08N100D2
IXTY08N100D2
IXYS
MOSFET N-CH 1000V 800MA TO252
IPA60R460CEXKSA1
IPA60R460CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 9.1A TO220-FP
PJD16N06A-AU_L2_000A1
PJD16N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
FCU7N60TU
FCU7N60TU
Fairchild Semiconductor
MOSFET N-CH 600V 7A IPAK
PSMN022-30BL,118
PSMN022-30BL,118
Nexperia USA Inc.
MOSFET N-CH 30V 30A D2PAK
NVMFS6H824NWFT1G
NVMFS6H824NWFT1G
onsemi
MOSFET N-CH 80V 19A/103A 5DFN
SPI42N03S2L-13
SPI42N03S2L-13
Infineon Technologies
MOSFET N-CH 30V 42A TO262-3
IPB05N03LB G
IPB05N03LB G
Infineon Technologies
MOSFET N-CH 30V 80A TO263-3
IXFT78N60X3HV
IXFT78N60X3HV
IXYS
MOSFET ULTRA 600V 78A TO268HV

Related Product By Brand

KITAURIXTC275LITETOBO1
KITAURIXTC275LITETOBO1
Infineon Technologies
AURIX TC275 LITE KIT
PZTA42E6327HTSA1
PZTA42E6327HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT223-4
IRF9332TRPBF
IRF9332TRPBF
Infineon Technologies
MOSFET P-CH 30V 9.8A 8SO
IQE006NE2LM5CGATMA1
IQE006NE2LM5CGATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/298A IPAK
IRF7457PBF
IRF7457PBF
Infineon Technologies
MOSFET N-CH 20V 15A 8SO
PMB8761V3.14
PMB8761V3.14
Infineon Technologies
INFINEON PMB8761V3.14 TELECOM IC
6EDL04N06PTXUMA1
6EDL04N06PTXUMA1
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28TSSOP
IR2118STR
IR2118STR
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8SOIC
TLE49641MXTSA1
TLE49641MXTSA1
Infineon Technologies
MAG SWITCH UNIPOLAR SOT23-3
CY7C1413KV18-300BZCT
CY7C1413KV18-300BZCT
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1263V18-400BZC
CY7C1263V18-400BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1565KV18-400BZC
CY7C1565KV18-400BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA